ESPECIFICACIONES
CL(IDD): 11 cycles
Row Cycle Time (tRCmin): 48.125ns (min.)
Refresh to Active/Refresh Command Time (tRFCmin): 260ns (min.)
Row Active Time (tRASmin): 35ns (min.)
Maximum Operating Power: TBD W*
UL Rating: 94 V - 0
Operating Temperature 0 ºC to 85 ºC
Storage Temperature -55 ºC to +100 ºC
*Power will vary depending on the SDRAM used.
FEATURES
JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
VDDQ = 1.5V (1.425V ~ 1.575V)
800MHz fCK for 1600Mb/sec/pin
8 independent internal bank
Programmable CAS Latency: 11, 10, 9, 8, 7, 6
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with starting address 000 only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
Bi-directional Differential Data Strobe
Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C
Asynchronous Reset
PCB: Height 0.740 (18.75mm) or 1.180 (30.00mm)
- Garantía por escrito de 12 meses - (9578)0(AI) - KVR16N11S8/4-ai