SPECIFICATIONS
CL(IDD): 11 cycles
Row Cycle Time (tRCmin): 48.125ns (min.)
Refresh to Active/Refresh Command Time: 260ns (min.)
Row Active Time (tRASmin): 35ns (min.)
Maximum Operating Power (1.35V) = 2.376 W*
UL Rating: 94 V - 0
Operating Temperature: 0 ºC to 85o ºC
Storage Temperature: -55 º C to +100 ºC
*Power will vary depending on the SDRAM.
FEATURES
? JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~1.575V) Power Supply
? VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)
? 800MHz fCK for 1600Mb/sec/pin
? 8 independent internal bank
? Programmable CAS Latency: 11, 10, 9, 8, 7, 6, 5
? Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
? 8-bit pre-fetch
? Burst Length: 8 (Interleave without any limit, sequential with starting address 000 only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
? Bi-directional Differential Data Strobe
? Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
? On Die Termination using ODT pin
? Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE ? 95°C
? Asynchronous Reset
? PCB: Height1.18 (30mm), double sided component
? Lead Free RoHS Compliant
- Garantía por escrito de 12 meses - (9370)0(EL) - KVR16LS11/4-el