8GB 2Rx8 1G x 64-Bit PC3-12800
CL11 240-Pin DIMM

JEDEC standard 1.5V (1.425V ~ 1.575V) Power Supply
VDDQ = 1.5V (1.425V ~ 1.575V)
800MHz fCK for 1600Mb/sec/pin
8 independent internal banks
Programmable CAS latency: 11, 10, 9, 8, 7, 6
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
8-bit pre-fetch
Burst Length: 8 (interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write (either on the fly using A12 or MRS)
Bi-directional Differential Data Strobe
Internal (self) calibration: Internal self calibration through ZQ
pin (RZQ: 240 ohm ± 1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°Cº
Asynchronous Reset
PCB: Height 0.740” (18.75mm) or 1.180” (30.00mm)

CL(IDD): 11 cycles
Row Cycle Time (tRCmin): 48.125ns(min.)
Refresh to Active/Refresh - Command Time (tRFCmin): 260ns(min.)
Row Active Time (tRASmin): 35ns(min.)
Maximum Operating Power: *Power will vary depending on the SDRAM used.
UL Rating: 94 V - 0
Operating Temperature: 0° C to +85° C
Storage Temperature: -55º C to +100º C

- Garantía por escrito de 12 meses - (8855)0(AI) - KVR16N11/8-ai